BMW i Ventures makes strategic investment in GaN Systems; next-gen power electronics

By mmillikin BMW i Ventures has made a strategic investment in GaN Systems, a fabless power transistor company at the forefront of semiconductor technology. Gallium Nitride (GaN) is a wide band gap (WBG) semiconductor material that allows for higher energy efficiency, smaller form factors and higher performance.

GaN devices offer a number of benefits compared to silicon-based devices, including high dielectric strength; high current density; high switching speeds; low on-resistance; and the ability to withstand higher operating temperature. Compared to silicon, gallium nitride has ten times higher electrical breakdown characteristics, three times the band gap, and exceptional carrier mobility.

GaN Systems focuses on GaN-based

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