By mmillikin BMW i Ventures has made a strategic investment in GaN Systems, a fabless power transistor company at the forefront of semiconductor technology. Gallium Nitride (GaN) is a wide band gap (WBG) semiconductor material that allows for higher energy efficiency, smaller form factors and higher performance.
GaN devices offer a number of benefits compared to silicon-based devices, including high dielectric strength; high current density; high switching speeds; low on-resistance; and the ability to withstand higher operating temperature. Compared to silicon, gallium nitride has ten times higher electrical breakdown characteristics, three times the band gap, and exceptional carrier mobility.
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