By Kelly Pickerel Trina Solar announced that its State Key Laboratory (SKL) of PV Science and Technology (PVST) has set a new record of 24.13% total-area efficiency for a large-area (156 x 156mm²) n-type mono-crystalline silicon (c-Si) Interdigitated Back Contact (IBC) solar cell.
The record-breaking n-type mono-crystalline silicon solar cell was fabricated on a large-sized phosphorous-doped Cz Silicon substrate with a low-cost industrial IBC process, featuring conventional tube doping technologies and fully screen-printed metallization. The solar cell reached a total-area efficiency of 24.13% as independently measured by the Japan Electrical Safety & Environment Technology Laboratories (JET). The IBC solar cell has a total measured
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